Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Semiconductor device or thin film electric solid-state...
Patent
1994-07-26
1995-11-14
King, Roy V.
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
Semiconductor device or thin film electric solid-state...
505410, 505473, 505475, 505193, 505238, 505702, 505729, 427 62, 427 63, 257 39, 257 35, H01L 3924, B05D 512
Patent
active
054666643
ABSTRACT:
A method of manufacturing a superconducting device involves forming a thin film on the surface of a substrate, forming a superconducting gate electrode on a portion of the thin film, etching the portions of the thin film using the gate electrode as a mask thereby providing a superconducting channel under the gate, forming a step portion on the superconducting channel and under the gate, converting the oxide portion of the step portion into a gate insulation portion by heating the substrate in a vacuum, forming a second oxide superconducting film on the exposed surface of the channel so that superconducting source and drain electrodes are formed on each side of the gate such that the drain and source have a thickness greater than that of the channel and are electrically isolated from the gate electrode.
REFERENCES:
patent: 5236896 (1993-08-01), Nakamura et al.
Iiyama Michitomo
Inada Hiroshi
Nakamura Takao
King Roy V.
Sumitomo Electric Industries Ltd.
LandOfFree
Method for manufacturing a superconducting device having a thin does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a superconducting device having a thin , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a superconducting device having a thin will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1220936