Method for manufacturing a silicon wafer by using a dopant foil

Details Method for manufacturing a silicon wafer by using a dopant foil Method for manufacturing a silicon wafer by using a dopant foil

1996-10-17

1998-06-02

Chaudhari, Chandra

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438458, 438465, H01L 21301

Patent

active

057599092

ABSTRACT:
A method for manufacturing a silicon wafer, in which a diffusion process takes place. During the diffusion process, a dopant foil is applied to one side, and a neutral foil to the other side. The silicon wafers are cut out by means of wire sawing out of a silicon monocrystal, since they then exhibit an optimal surface roughness for the subsequent diffusion process.

REFERENCES:
patent: 5024867 (1991-06-01), Iwabuchi
patent: 5225235 (1993-07-01), Yoshiharu et al.
patent: 5240882 (1993-08-01), Satoh et al.
patent: 5393711 (1995-02-01), Biallas et al.
patent: 5461002 (1995-10-01), Safir
patent: 5472909 (1995-12-01), Akatsuka et al.

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