Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-02-07
2006-02-07
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S424000, C438S637000, C438S638000
Reexamination Certificate
active
06995074
ABSTRACT:
A method for forming a semiconductor wafer such as a standard semiconductor wafer used in a surface analysis system. Openings may be formed by partially etching a semiconductor substrate, and an insulation film may be formed on the openings. Contact holes may be formed to expose portions of the semiconductor substrate and the insulation film in the openings. The contact holes may be inspected by the surface analysis system, and the reliability of data obtained from the surface analysis system may be more precisely discriminated.
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Korean Patent No. 2000-67104 (English translation of Abstract only).
Korean Office Action dated 11/24/2004.
Harness Dickey & Pierce
Jackson Jerome
Ortiz Edgardo
Samsung Electronics Co,. Ltd.
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