Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2008-04-28
2010-11-30
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C257SE21347
Reexamination Certificate
active
07842590
ABSTRACT:
A method for manufacturing a semiconductor device by laser annealing. One embodiment provides a semiconductor substrate having a first surface and a second surface. The second surface is arranged opposite to the first surface. A first dopant is introduced into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface. A second dopant is introduced into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth. At least a first laser anneal is performed by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface.
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Felsl Hans Peter
Gutt Thomas
Niedernostheide Franz-Josef
Pfaffenlehner Manfred
Schulze Holger
Chaudhari Chandra
Dicke Billig & Czaja, PLLC
Infineon Technologies Austria AG
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