Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-01-06
2000-04-18
Fahmy, Wael M.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438162, 438288, 438289, H01L 310392, H01L 31113
Patent
active
060514523
ABSTRACT:
A silicon oxide layer serving as an insulation layer is formed on a p-type semiconductor substrate. An n.sup.+ -type source and drain regions are formed on the p-type substrate 110 with a spacing therebetween. A channel region is interposed between the source and drain regions. A silicon oxide layer serving as an insulation layer is formed on the channel region. A gate terminal is formed on the silicon oxide layer. High-concentration p-type regions are formed in the p-type semiconductor substrate under the source and drain regions, respectively.
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Enda Toshiyuki
Shigyo Naoyuki
Coleman William David
Fahmy Wael M.
Kabushiki Kaisha Toshiba
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