Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-05-22
2010-06-29
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S482000, C438S795000, C257S049000, C257SE21001
Reexamination Certificate
active
07745268
ABSTRACT:
To provide a semiconductor device with high performance and low cost and a manufacturing method thereof. A first region including a separated (cleavage) single-crystal semiconductor layer and a second region including a non-single-crystal semiconductor layer are provided over a substrate. It is preferable that laser beam irradiation be performed to the separated (cleavage) single-crystal semiconductor layer in an inert atmosphere, and laser beam irradiation be performed to the non-single-crystal semiconductor layer in an air atmosphere at least once.
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Fan Michele
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Smith Matthew
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