Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-29
2010-06-22
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21476
Reexamination Certificate
active
07741219
ABSTRACT:
In one embodiment, a method, comprises forming a diffusion layer on a semiconductor substrate, forming a selectively deposited metal or metal alloy on an aluminum gate structure by removing an aluminum oxide layer from the aluminum gate structure and depositing a zinc layer on the aluminum gate structure by a zincating process, and selectively depositing a sacrificial metal or metal alloy cap on the aluminum gate layer by displacing the zinc layer. This embodiment enables the SAC process flow on devices with Aluminum gates.
REFERENCES:
patent: 6083828 (2000-07-01), Lin et al.
patent: 7091610 (2006-08-01), Bohr
patent: 2006/0032757 (2006-02-01), Brevnov et al.
patent: 2006/0223302 (2006-10-01), Chang et al.
Saito et al., “Electrochemical analysis of zincate treatments for Al and Al alloy films”, Electrochimica Acta, 51 (2005) pp. 1017-1020.
Delaunois, F et al., “Heat Treatment for Electroless Nickel-Boron Plating on Aluminum Alloys”,Surface and Coatings Technology160, (Mar. 4, 2002), pp. 239-248.
Cao Yang
Chikarmane Vinay B.
Caven & Aghevli LLC
Coleman W. David
Intel Corporation
McCall-Shepard Sonya D
LandOfFree
Method for manufacturing a semiconductor device using the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a semiconductor device using the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device using the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4173099