Method for manufacturing a semiconductor device using a heat tre

Details Method for manufacturing a semiconductor device using a heat tre Method for manufacturing a semiconductor device using a heat tre

1991-09-24

1994-05-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437247, 437982, 148DIG133, H01L 2100, H01L 2102, H01L 21324, H01L 21477

Patent

active

053148487

ABSTRACT:
Described is a method for manufacturing semiconductor devices which includes a heat treating process for heating and cooling semiconductor substrates mounted on a boat at a predetermined pitch according to a predetermined temperature profile, in order to flatten the surface of each semiconductor substrate by reflowing an insulating film containing impurities, for example, a BPSG film formed on the substrate. In the heat treating process, one of the control factors which affects the formation of grains or particles due to the impurities contained in the insulating film is set so as to prevent the impurities from generating grains or particles during the heat treatment. Also disclosed is a method of preventing the generation of grains or particles by widening the pitch of the mounted substrates.

REFERENCES:
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patent: 4420503 (1983-12-01), Leung et al.
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patent: 5112776 (1992-05-01), Marks et al.
Wakamatsu, Oki Denki Research Development 140, vol. 55, 1988, pp. 123-128.
Matsushita, 26a-D-5, Autumn Meeting of Japanese Applied Physics Society, No. 51, 1990, p. 546.

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