Intracavity quantum well photodetector integrated within a verti

Details Intracavity quantum well photodetector integrated within a verti Intracavity quantum well photodetector integrated within a verti

1996-10-16

1998-05-26

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 43, 372 44, 372 45, 372 46, 372 98, 372 99, H01S 319

Patent

active

057578370

ABSTRACT:
A vertical-cavity surface emitting laser is constructed with an intracavity quantum well photodetector. The quantum well photodetector is placed at an optical intensity peak at the Fabry-Perot wavelength. The device may include a current confinement layer in the form of an oxidation layer, an air gap, or proton implantation. The device may be formed with a semi-insulating substrate, a p+ doped substrate, or an n+ doped substrate. Embodiments of the invention include an air bridge contact, a ridge waveguide structure, and buried heterostructure layers.

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