Method for manufacturing a semiconductor device that...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S763000, C438S798000

Reexamination Certificate

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07056825

ABSTRACT:
In a method for manufacturing a semiconductor device having a multi-layer insulating film, a first insulating film is formed as one layer of the multi-layer insulating film, and a plasma treatment is performed on the surface of the first insulating film in an ambient of helium and argon, containing 5 to 31% Ar. After the plasma treatment, a second insulating film, different from the first insulating film, is formed on the first insulating film as another layer of the multi-layer insulating film.

REFERENCES:
patent: 5858882 (1999-01-01), Chang et al.
patent: 5928480 (1999-07-01), Leiphart
patent: 5962344 (1999-10-01), Tu et al.
patent: 6106683 (2000-08-01), Ohkawa
patent: 6124216 (2000-09-01), Ko et al.
patent: 8140225 (2000-10-01), Usami et al.
patent: 6225236 (2001-05-01), Nishimoto et al.
patent: 6358841 (2002-03-01), Bao et al.
patent: 6524972 (2003-02-01), Maeda
patent: 6784485 (2004-08-01), Cohen et al.
patent: 2002/0033486 (2002-03-01), Kim et al.
patent: 2003/0082924 (2003-05-01), Andideh et al.
patent: 2003/0228413 (2003-12-01), Ohta et al
patent: 08-111458 (1996-04-01), None
patent: 2000-68096 (2000-03-01), None
patent: 2000-68261 (2000-03-01), None
patent: 2000-106364 (2000-04-01), None
patent: 2000-332011 (2000-11-01), None
patent: 2001-274250 (2001-10-01), None
patent: 2001-291872 (2001-10-01), None
patent: 2002-026121 (2002-01-01), None
patent: 2002-370059 (2002-12-01), None
patent: 2003-309173 (2003-10-01), None
patent: 469532 (2001-12-01), None

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