Method for manufacturing a semiconductor device involving formin

Details Method for manufacturing a semiconductor device involving formin Method for manufacturing a semiconductor device involving formin

1997-07-07

1999-09-07

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438789, H01L 21469

Patent

active

059501014

ABSTRACT:
A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.

REFERENCES:
patent: 4885262 (1989-12-01), Ting et al.
patent: 5576247 (1996-11-01), Yano et al.
patent: 5605867 (1997-02-01), Sato et al.

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