Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-20
2006-06-20
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S303000, C257S351000, C257S379000, C438S200000, C438S210000
Reexamination Certificate
active
07064369
ABSTRACT:
In a method for fabricating a semiconductor device including a PIP capacitor and a MOS transistor, an isolator film is formed on a semiconductor substrate and then etched to expose an active region of the substrate. An epitaxial film is then formed by performing a selective epitaxial silicon growth process on the active region. A first polysilicon film, a dielectric film and a second polysilicon film are then sequentially formed. Next, an upper electrode is created by patterning the second polysilicon film. After a lower electrode and a gate electrode are formed by patterning the first polysilicon film, a source and a drain of a source/drain region are formed into the epitaxial film. Subsequently, after an interlayer insulation film is created on a resultant structure, contact holes are formed thereinto and contacts connected to the upper electrode, the lower electrode, the gate electrode and the source/drain region are formed.
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DongbuAnam Semiconductor Inc.
Gebremariam Samuel A
Kang Donghee
Pillsbury Winthrop Shaw & Pittman LLP
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