Method for manufacturing a semiconductor device including a...

Details Method for manufacturing a semiconductor device including a... Method for manufacturing a semiconductor device including a...

2011-02-01

2011-02-01

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C257S610000, C257SE21645

Reexamination Certificate

active

07879702

ABSTRACT:
A method for manufacturing a semiconductor device includes the consecutive steps of selectively implanting first-conductivity-type impurities into a silicon substrate in a memory cell array area to form first source/drain regions, heat treating to diffuse the impurities in the first source/din regions; selectively implanting impurities into the silicon substrate in a peripheral circuit area to form second source/drain regions in the peripheral circuit area.

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patent: 2006-120832 (2006-05-01), None
Japanese Office Action. Translation of pertinent information provided.
Japanese Office Action with Translations.

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