Method for manufacturing a semiconductor device including...

Details Method for manufacturing a semiconductor device including... Method for manufacturing a semiconductor device including...

2004-07-23

2008-12-02

Pizarro, Marcos D. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S029000, C438S034000, C438S039000, C438S045000, C257SE33053

Reexamination Certificate

active

07459354

ABSTRACT:
The crystallization method by laser light irradiation forms a multiplicity of convexes (ridges) in the surface of an obtained crystalline semiconductor film, deteriorating film quality. Therefore, it is a problem to provide a method for forming a ridge-reduced semiconductor film and a semiconductor device using such a semiconductor film. The present invention is characterized by heating a semiconductor film due to a heat processing method (RTA method: Rapid Thermal Anneal method) to irradiate light emitted from a lamp light source after crystallizing the semiconductor film by laser light, thereby reducing the ridge.

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