Method for manufacturing a semiconductor device having increased

Details Method for manufacturing a semiconductor device having increased Method for manufacturing a semiconductor device having increased

1992-02-28

1994-06-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

053246799

ABSTRACT:
A semiconductor device having a capacitor of large capacitance and the fabrication method thereof are disclosed. The semiconductor device comprises; a first electrode composed of a conductive structure whose entire surface, including sidewalls, are uneven and formed on the semiconductor substrate; a second electrode formed on the first electrode; and a dielectric film formed between the first and second electrodes. Also the method comprises the steps of forming as a first electrode a conductive structure with an uneven surface on a semiconductor structure, forming a dielectric film, and forming a conductive layer as a second electrode on the conductive structure. Accordingly, a capacitor of large capacitance and high reliability can be obtained.

REFERENCES:
patent: 3856587 (1974-12-01), Yamazaki et al.
patent: 4578142 (1986-03-01), Corboy, Jr. et al.
patent: 4698316 (1987-10-01), Corboy, Jr. et al.
patent: 4906590 (1990-03-01), Kanetaki et al.
patent: 5043780 (1991-08-01), Fazan et al.
patent: 5068199 (1991-11-01), Sandhu
patent: 5112773 (1992-05-01), Tuttle
patent: 5149676 (1992-09-01), Kim et al.
Mine et al. "Capacitance-Enhanced Stacked-Capacitor with Engraved Storage Electrode for Deep Submicron DRAMs" Hitachi VLSI Engineering Corp., Tokyo Japan, pp. 137-140, 1989, month unknown.
Fazan et al. "Electrical Characterization of Textured Interpoly capacitors for Advanced Stacked DRAMs" IEDM Technical Digest, 1990, month unknown.
H. Watanabe, et al., "A New Stacked Capacitor Structure Using Hemispherical-Grain (HSG) Poly-Silicon Electrodes"; Extended Abstracts of the 22nd (1990 Int'l) Conference on Solid State Devices and Materials, Sendai, 1990, pp. 873-876, month unknown.
Yoshio Hayashide et al., "Fabrication of Storage Capacitance-Enhanced Capacitors With a Rough Electrode"; Extended Abstracts of the 22nd (1990 Int'l) Conference on Solid State Devices and Materials, Sendai, 1990, pp. 869-872, month unknown.

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