Method for manufacturing a semiconductor device having fine cont

Details Method for manufacturing a semiconductor device having fine cont Method for manufacturing a semiconductor device having fine cont

1997-08-12

2000-09-05

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438637, 438687, H01L 2144

Patent

active

061142441

ABSTRACT:
A semiconductor device includes at least one hole formed on a semiconductor substrate. A barrier method is formed on at least one portion in contact with the semiconductor substrate in the hole. A metal interconnection is constituted by two layers including a first Al-containing metal film formed on the barrier metal, and a second Al-containing metal film formed on the first Al-containing metal film and having a melting point lower than the melting point of the first Al-containing metal film.

REFERENCES:
patent: 5169803 (1992-12-01), Miyakawa
patent: 5616519 (1997-04-01), Ping
patent: 5763954 (1998-06-01), Hyakutake

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