Method for manufacturing a semiconductor device having a limited

Details Method for manufacturing a semiconductor device having a limited Method for manufacturing a semiconductor device having a limited

1997-12-24

1999-07-13

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438229, 257365, H01L 2128, H01L 2146

Patent

active

059239697

ABSTRACT:
In order to reduce the thickness of an impurity diffusion region of a first conductivity type formed near the surface of a semiconductor substrate, a pocket region is formed under the impurity diffusion region. If the pocket region is large, a junction capacitance between the impurity diffusion region and the pocket region cannot be neglected. In order to reduce the size of the pocket region to the minimum permissible size, gates and dummy gates which are temporarily formed to suppress the non-uniformity of the gate dimensions by uniformly giving an influence of the optical proximity effect to a plurality of gates are used as a mask used for implanting an impurity into the surface portion of the semiconductor substrate to form the pocket regions. Thus, the pocket region can be formed in a limited area between the gate and the dummy gate.

REFERENCES:
patent: 4590665 (1986-05-01), Owens et al.
patent: 4963501 (1990-10-01), Ryan et al.
patent: 4975382 (1990-12-01), Takasugi
patent: 5336624 (1994-08-01), Walden
patent: 5410161 (1995-04-01), Narita
patent: 5426326 (1995-06-01), Ohyu et al.
patent: 5449937 (1995-09-01), Arimura et al.

Affiliated with

Also associated with

Rating

Method for manufacturing a semiconductor device having a limited does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a semiconductor device having a limited, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device having a limited will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2287324