Semiconductor device manufacturing: process – Forming schottky junction – Using refractory group metal
Reexamination Certificate
2008-03-04
2008-03-04
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Forming schottky junction
Using refractory group metal
C438S592000, C438S649000, C438S651000
Reexamination Certificate
active
07338888
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing the semiconductor device (100), among other possible steps, includes forming a polysilicon gate electrode over a substrate (110) and forming source/drain regions (170) in the substrate (110) proximate the polysilicon gate electrode. The method further includes forming a blocking layer (180) over the source/drain regions (170), the blocking layer (180) comprising a metal silicide, and siliciding the polysilicon gate electrode to form a silicided gate electrode (150).
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Bu Haowen
Jiang Ping
Lu Jiong-Ping
Yu Shaofeng
Brady III W. James
Luu Chuong Anh
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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