Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-02
2010-11-16
Nadav, Ori (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S778000
Reexamination Certificate
active
07833901
ABSTRACT:
In a method of manufacturing a semiconductor device where at least one insulating layer structure having a metal wiring constitution is formed to thereby construct a multi-layered wiring arrangement, a first SiOCH layer is produced. Then, a surface section of the first SiOCH layer is treated to change the surface section of the first SiOCH layer to a second SiOCH layer which features a carbon (C) density lower than that of the first SiOCH layer, a hydrogen (H) density lower than that of the first SiOCH layer and an oxygen (O) density higher than that of the first SiOCH layer. Finally, a silicon dioxide (SiO2) layer is formed on the second SiOCH layer.
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Arita Koji
Kitao Ryohei
Morita Noboru
Ohnishi Sadayuki
Ohto Koichi
Nadav Ori
NEC Electronics Corporation
Scully , Scott, Murphy & Presser, P.C.
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