Semiconductor device manufacturing: process – Forming schottky junction – Using refractory group metal
Reexamination Certificate
2008-03-04
2008-03-04
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Forming schottky junction
Using refractory group metal
C438S592000, C438S649000, C438S651000
Reexamination Certificate
active
10810759
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing the semiconductor device (100), among other possible steps, includes forming a polysilicon gate electrode over a substrate (110) and forming source/drain regions (170) in the substrate (110) proximate the polysilicon gate electrode. The method further includes forming a blocking layer (180) over the source/drain regions (170), the blocking layer (180) comprising a metal silicide, and siliciding the polysilicon gate electrode to form a silicided gate electrode (150).
REFERENCES:
patent: 5545581 (1996-08-01), Armacost et al.
patent: 6096609 (2000-08-01), Kim et al.
patent: 6376320 (2002-04-01), Yu
patent: 6423634 (2002-07-01), Wieczorek et al.
patent: 6514859 (2003-02-01), Erhardt et al.
patent: 6555453 (2003-04-01), Xiang et al.
patent: 6562718 (2003-05-01), Xiang et al.
patent: 6620718 (2003-09-01), Wieczorek et al.
patent: 6821887 (2004-11-01), Wieczorek et al.
patent: 6830987 (2004-12-01), Pelella et al.
patent: 6864178 (2005-03-01), Kim
patent: 2005/0215055 (2005-09-01), Bu et al.
Jakub Kedzierski, et al.; “Issues in NiSi-Gated FDSOI Device Integration”; 2003 IEEE.
Bu Haowen
Jiang Ping
Lu Jiong-Ping
Yu Shaofeng
Brady III W. James
Luu Chuong Anh
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
LandOfFree
Method for manufacturing a semiconductor device having a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a semiconductor device having a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device having a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3917048