Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-12-22
2009-08-04
Richards, N Drew (Department: 2822)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S230000, C438S301000, C438S303000, C257SE21002
Reexamination Certificate
active
07569464
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device, which includes forming a gate structure over a substrate, and forming a stack of layers on the substrate and at least partially along a sidewall of the gate structure. In this embodiment, the stack of layers includes an initial layer located over the substrate, a buffer layer located over the initial layer and an offset layer located over the buffer layer. This embodiment of the method further includes removing horizontal segments of the offset layer and the buffer layer using a dry etch and a wet clean, wherein removing includes choosing at least one of an initial thickness of the buffer layer, a period of time for the dry etch or a period of time for the wet clean such that horizontal segments of the initial layer are exposed and substantially unaffected after the dry etch and wet clean.
REFERENCES:
patent: 7098099 (2006-08-01), Hornung et al.
patent: 7217625 (2007-05-01), Lee et al.
Chen Yuanning
Jacobs Jarvis B.
Kirmse Karen H. R.
Riley Deborah J.
Brady III Wade J.
Novacek Christy L
Richards N Drew
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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