Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-05-01
2010-06-15
Cao, Phat X (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C257SE21584
Reexamination Certificate
active
07737030
ABSTRACT:
A method for manufacturing a semiconductor device has forming a first metal wire in a groove formed in an insulating film on a semiconductor substrate, forming an interlayer dielectric on the insulating film and the first metal wire, forming a via hole by etching the interlayer dielectric, forming a first barrier metal on sidewalls of the via hole, forming an organic film in the via hole having the first barrier metal formed therein, etching the first barrier metal exposed by performing an etchback on the organic film to a predetermined position, forming a trench integrally with an upper portion of the via hole by etching the interlayer dielectric to a predetermined position, forming a second barrier metal on the first barrier metal and sidewalls of the trench in the via hole, after the organic film remaining in the via hole is removed, and forming a second metal wire in the via hole and the trench having the second barrier metal formed therein.
REFERENCES:
patent: 6528409 (2003-03-01), Lopatin et al.
patent: 6812133 (2004-11-01), Takeuchi
patent: 6861347 (2005-03-01), Lee et al.
patent: 6952052 (2005-10-01), Marathe et al.
patent: 2007/0037385 (2007-02-01), Huebinger et al.
patent: 2006-5010 (2006-01-01), None
Cao Phat X
Doan Nga
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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