Method for manufacturing a semiconductor device and a method for

Details Method for manufacturing a semiconductor device and a method for Method for manufacturing a semiconductor device and a method for

1997-06-11

1999-03-02

Picardat, Kevin

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438615, 438661, H01L 2144

Patent

active

058770798

ABSTRACT:
A method for manufacturing and mounting a semiconductor device in which a void in a bonding portion is eliminated. A material which is to be formed into a protruding electrode is placed on a semiconductor element. The protruding electrode material is heated in a depressurized atmosphere so as to be melted. Then, the protruding electrode material is heated in a pressurized atmosphere which provides a pressure greater than a pressure in said depressurized atmosphere. Finally, the protruding electrode material is cooled so as to be solidified while the pressurized atmosphere is maintained. The semiconductor device is mounted to a mount board after a surface layer is electroplated on an electrode of the mount board.

REFERENCES:
patent: 4545610 (1985-10-01), Lakritz et al.
patent: 4950623 (1990-08-01), Dishon
patent: 5162257 (1992-11-01), Yung
patent: 5175125 (1992-12-01), Wong
patent: 5658827 (1997-08-01), Aulicino et al.

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