Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2008-03-04

2008-03-04

Geyer, Scott B. (Department: 2822)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C438S519000, C438S542000, C438S548000

Reexamination Certificate

active

07338876

ABSTRACT:
A method for forming a semiconductor memory device includes the steps of: implanting a dopant in a semiconductor substrate; heat treating the semiconductor substrate in an oxidizing ambient to diffuse the dopant for forming diffused regions in the semiconductor substrate; and forming memory cells each including a MOS transistor having the diffused regions as source/drain regions.

REFERENCES:
patent: 3808060 (1974-04-01), Hays et al.
patent: 4697332 (1987-10-01), Joy et al.
patent: 4927777 (1990-05-01), Hsu et al.
patent: 5362670 (1994-11-01), Iguchi et al.
patent: 6372590 (2002-04-01), Nayak et al.
patent: 6475887 (2002-11-01), Kawasaki et al.
patent: 6559018 (2003-05-01), Liu et al.
patent: 6890854 (2005-05-01), Lee et al.
patent: 6900521 (2005-05-01), Forbes et al.
patent: 7071067 (2006-07-01), Ahmad
patent: 7109536 (2006-09-01), Nakabayashi
patent: 2001/0019871 (2001-09-01), Yamaguchi et al.
patent: 661486 (1994-03-01), None
patent: 2003017586 (2003-01-01), None

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