Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2011-08-16
2011-08-16
Ho, Hoang-Quan T (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S542000, C438S787000, C438S795000, C257S072000, C257S075000, C257SE21297, C257SE21370, C257SE21413
Reexamination Certificate
active
07998844
ABSTRACT:
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
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Fukunaga Takeshi
Miyanaga Akiharu
Ohtani Hisashi
Zhang Hongyong
Ho Hoang-Quan T
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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