Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-09-30
1999-12-28
Booth, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438166, H01L 2184
Patent
active
060080787
ABSTRACT:
A semiconductor device is manufactured by the use of a glass substrate which has previously been heated. An amorphous semiconductor layer is formed on the previously heated glass substrate and then crystallized by heat. By virtue of the previous heating, shrink of the glass substrate after the crystallization process is reduced. Accordingly, internal stress is not generated in the crystallized semiconductor layer. The semiconductor device thus manufactured is superior in electrical property.
REFERENCES:
patent: 4214919 (1980-07-01), Young
patent: 4565584 (1986-01-01), Tamura et al.
patent: 4575925 (1986-03-01), Kanabara et al.
patent: 4592799 (1986-06-01), Hayafuji
patent: 4727044 (1988-02-01), Yamazaki
patent: 4851363 (1989-07-01), Troxell et al.
patent: 5108843 (1992-04-01), Ohtaka et al.
patent: 5210050 (1993-05-01), Yamazaki et al.
patent: 5236850 (1993-08-01), Zhang
patent: 5254208 (1993-10-01), Zhang
patent: 5294238 (1994-03-01), Fukada et al.
patent: 5313075 (1994-05-01), Zhang et al.
patent: 5523240 (1996-06-01), Zhang et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5665210 (1997-09-01), Yamazaki
patent: 5716857 (1998-02-01), Zhang
Haberle et al., "Electrical Properties and Structure of Boron-Doped Sputter-Deposited Polycrystalline Silicon Films", Thin Solid Films, 61(1979), pp. 105-113.
Brodsky et al., "Doping of Sputtered Amorphous Semiconductors", IBM Technical Disclosure Bulletin, pp. 4802-4803, May 1977.
Extended Abstracts of the 20th. Int. Conf. on Solid State Dev. and Materials, Aug. 24, 1988, Tokyo, pp. 619-620; K. Nakazawa et al.; "Low Temperature Thin Film Transistor Fabrication Using a Polycrystalline Sillicon Film Formed from a Fluorinated Silicon Film".
IEEE Electron Device Letters, vol. 11, No. 6, Jun. 1990, New York, U.S., pp. 258-260; Hiroshi Kanoh et al., "Amorphous-Silicon/Silicon-Nitride Thin-Film Transistors Fabricated by Plasma-free (Chemical Vapor Deposition) Method".
Suyama et al., "Electrical Conduction Mechanism and Breakdown Property in Sputter-Deposited Silicon Dioxide Films on Polycrystalline Silicon", J. Appl. Physics, vol. 65, No. 1, pp. 210-214.
Lemmons et al., "Laser Crystallization of Si Films on Glass", Applied Physics Letters, vol. 40, No. 6, pp. 469-471, Mar. 15, 1992.
Wolf et al., "Silicon Processing for the VLSI Era", vol. 1, pp. 175-177, 1986.
Booth Richard
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Method for manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2381700