Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1984-02-01

1986-01-14

Downey, Mary F.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430314, 430317, 430318, 430329, 430330, 427 38, 148187, 29576B, G03C 500, H01L 2100

Patent

active

045645833

ABSTRACT:
Disclosed is a method for manufacturing a semiconductor device which comprises a process for forming a positive-type resist film and a negative-type resist film on a semiconductor substrate, a process for exposing predetermined regions of both resist films to radiation, a process for developing the upper resist film to form a first resist pattern adapted to be used as a mask for ion-implantation, a process for developing the lower resist film to form a second resist pattern opposite to the first resist pattern after peeling off the first resist pattern, and a process for treatment the semiconductor substrate using the second resist pattern as a mask.

REFERENCES:
patent: 3873313 (1975-03-01), Horst et al.
patent: 4283483 (1981-08-01), Coane
patent: 4394437 (1983-07-01), Bergendahl et al.

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