Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1995-04-28
1999-07-13
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438166, 438486, 148DIG16, H01L 2184
Patent
active
059239620
ABSTRACT:
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
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Fukunaga Takeshi
Miyanaga Akiharu
Ohtani Hisashi
Zhang Hongyong
Bowers Jr. Charles L.
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Sulsky Martin
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