Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1979-09-20

1981-05-12

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29571, 148187, 156643, 156657, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

042670110

ABSTRACT:
Disclosed is a method for manufacturing a semiconductor device using a polycrystalline silicon layer as an electrode and/or wire which includes a process for applying a laser light or electron beam to the polycrystalline silicon layer prior to a patterning process, thereby preventing over-etching and diffusion of impurity into the surface of a semiconductor substrate which are liable to be caused in the manufacturing processes, facilitating patterning in a desired manner, and reducing the resistance of the polycrystalline silicon layer to improve the operating speed of the device.

REFERENCES:
patent: 3615935 (1971-10-01), O'Keeffe
Science, vol. 201, Laser Annealing: Processing Semiconductors without a Furnace by A. L. Robinson, Jul. 29, 1978, pp. 333-335.

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