Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1995-12-07
1999-11-16
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438142, 117 7, 117 8, H01L 2184
Patent
active
059857048
ABSTRACT:
A method for forming a silicon island used for forming a TFT or thin film diode comprises the step of pattering a silicon film with a photoresist mask. In order to prevent the contamination of the semiconductor film due to the photoresist material, a protective film such as silicon oxide is interposed between the semiconductor film and the photoresist film. Also, the protective film is preferably formed by thermal annealing or light annealing in an oxidizing atmosphere.
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Adachi Hiroki
Takemura Yasuhiko
Takenouchi Akira
Bowers Charles
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Sulsky Martin
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