Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1992-02-07

1994-06-14

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257306, 257740, 257751, H01L 2968

Patent

active

053213068

ABSTRACT:
A method for manufacturing a semiconductor device includes forming contact holes in insulating layers to expose an impurity doped region of a semiconductor substrate. An epitaxial layer is then grown in the contact hole. A polycrystalline silicon layer is formed over the top to provide the lower electrode of a capacitor. Accordingly, the polycrystalline layer is separated from the impurity doped region thereby preventing current leakage.

REFERENCES:
patent: 4521794 (1985-06-01), Murase et al.
patent: 4725877 (1988-02-01), Brasen et al.
patent: 4754313 (1988-06-01), Takemae et al.
patent: 5073810 (1991-12-01), Owada

Affiliated with

Also associated with

Rating

Method for manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1251474