Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1993-07-06

1995-03-21

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156655, 156656, 1566591, 156665, 252 791, 437229, 437245, B44C 122, C23F 100

Patent

active

053992369

ABSTRACT:
A method for manufacturing a semiconductor device including the steps of forming a photoresist pattern on a metal layer and forming a wiring by etching a metal composed of aluminum or aluminum alloy with plasma including chlorine and eliminating said photoresist pattern while simultaneously eliminating residual chlorine on the wiring by adding alkyl ketone or alkyl ether in an oxygen plasma ash chamber. The present invention can provide a method for manufacturing a semiconductor device, which can eliminate residual chlorine and a photoresist pattern by adding alkyl ketone or alkyl ether so that wiring corrosion may be prevented.

REFERENCES:
patent: 4372807 (1983-08-01), Vossen et al.
patent: 4581101 (1986-04-01), Senoue et al.
patent: 5068007 (1991-11-01), Rogers et al.
patent: 5246888 (1993-09-01), Miyamoto

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