Fishing – trapping – and vermin destroying
Patent
1992-06-22
1995-02-07
Breneman, R. Bruce
Fishing, trapping, and vermin destroying
437235, 437942, 437943, 427582X, 427583, 427584, 148DIG3, 148DIG4, 148DIG90, 148DIG93, H01L 21306
Patent
active
053875460
ABSTRACT:
The present invention relates to a method for manufacturing a semiconductor device including a method for reforming an insulating film formed by a low temperature CVD method. It is an object of the present Invention to provide a method for manufacturing a semiconductor device capable of improving a film quality of an insulating film formed by a CVD method which is able to form a film at a low temperature and also capable of maintaining mass productivity, in which processing by irradiation with ultraviolet rays of the insulating film while heating the film after forming an insulating film (4) on a body to be formed by a chemical vapor deposition method is included.
REFERENCES:
patent: 4588610 (1986-05-01), Yamazaki
patent: 4595601 (1986-06-01), Horioka et al.
patent: 4702936 (1987-10-01), Maeda et al.
patent: 4842891 (1989-06-01), Miyazaki et al.
patent: 5171710 (1992-12-01), Yamazaki et al.
Patent Abstracts of Japan, vol. 015, No. 054 (E-1031) Feb. 8, 1991 & JP-A-22 83 022 (Hitachi Ltd.) Nov. 20, 1990.
Journal of the Electrochemical Society, vol. 138, No. 12, Dec. 1991, Manchester, New Hampshire US, pp. 3727-3732, K. Fujino et al. "Low Temperature and Atmospheric Pressure CVD Using Polysiloxane, OMCTS, and Ozone", p. 3727, Col. 1, para. 2.
Patent Abstracts of Japan, vol. 014, No. 362 (E-960) Aug. 6, 1990, & JP-A-21 28 460 (NEC Corp.) May 16, 1990.
Patent Abstracts of Japan, vol. 7, No. 200 (E-196) (1345) Sep. 3, 1983 & JP-A-58 98 933 (Suwa Seikosha K.K.) Jun. 13, 1983.
Maeda Kazuo
Nishimoto Yuko
Tokumasu Noboru
Alcan-Tech Co., Ltd.
Breneman R. Bruce
Canon Sales Co., Inc.
Paladugu Ramamohan Rao
Semiconductor Process Laboratory Co. Ltd.
LandOfFree
Method for manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1110118