Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2008-05-30

2010-11-23

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S424000, C438S427000, C438S605000, C438S666000, C438S700000, C438S702000, C438S703000

Reexamination Certificate

active

07838412

ABSTRACT:
A manufacturing method of a semiconductor device wherein a metal pad is etched to form a trench in which a central part is concave in form, or to form a trench in the shape of a cylinder or a parallelepiped on the edge part of a metal pad. Accordingly, the contact area between a polymide isoindro quirazorindione (PIQ) or similar curable layer and the metal pad is increased and the bondability is improved. Accordingly, the technology of improving the characteristic of device by preventing the problem that the metal pad is excessively opened in a subsequent curing process and the layer of a lower portion of the metal pad is attacked is disclosed.

REFERENCES:
patent: 2002/0146898 (2002-10-01), Aoki
patent: 2003/0080428 (2003-05-01), Izumitani et al.
patent: 06-349886 (1994-12-01), None
patent: 2002-064100 (2002-02-01), None
patent: 2006-245468 (2006-09-01), None

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