Method for manufacturing a semiconductor device

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Including heating

Reexamination Certificate

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C430S311000, C430S322000, C430S331000

Reexamination Certificate

active

07736843

ABSTRACT:
To overcome the limitations to development of photosensitive layers in a lithography process using a light source such as KrF, ArF, VUV, EUV, E-beam, ion beam, etc., and a patterning process of a large circuit board or a bending substrate, the invention provides a method for manufacturing a semiconductor device in which the photosensitive layer comprises a thermal acid generator that is reacted with heat to form an acid, and a masking process in a lithography process using a light source is performed as a heat conduction process using a thermally conductive pattern so that a patterning process is performed easily without limiting the size and shape of a semiconductor substrate.

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patent: 03-217833 (1991-09-01), None
patent: 2000-330288 (2000-11-01), None
patent: 2000-330289 (2000-11-01), None

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