Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2007-07-12

2010-06-22

Jackson, Jr., Jerome (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21573, C257SE21581

Reexamination Certificate

active

07741211

ABSTRACT:
A semiconductor device can include a first interlayer dielectric layer disposed on a substrate, and an air gap defined in a portion of the first interlayer dielectric layer. The air gap can be formed within trenches etched into the first interlayer dielectric layer. An etch stop layer is disposed on the first interlayer dielectric layer and the air gap, and includes a hole communicating with the air gap.

REFERENCES:
patent: 6184121 (2001-02-01), Buchwalter et al.
patent: 6268277 (2001-07-01), Bang
patent: 7235493 (2007-06-01), Qin
patent: 2003-115534 (2003-04-01), None

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