Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2008-12-29

2010-06-08

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257SE21013, C257SE23165, C257SE51040

Reexamination Certificate

active

07732316

ABSTRACT:
In accordance with an embodiment of the invention the method of manufacturing a semiconductor device is capable of forming a semiconductor substrate having an embossing structure. The method includes forming a layer having a plurality of hemispherical single crystal silicon elements, and forming one or more carbon nano tubes between adjacent hemispherical single crystal silicon elements, thereby, increasing a length of an effective channel of a transistor.

REFERENCES:
patent: 7524718 (2009-04-01), Furusawa et al.

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