Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2006-10-24

2009-02-17

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S732000, C438S745000, C438S513000, C257SE21170, C257SE21218, C257SE21229, C257SE21347

Reexamination Certificate

active

07491645

ABSTRACT:
A method for manufacturing a semiconductor device includes: forming a protrusion-patterned layer on a substrate, the protrusion-patterned layer including a plurality of separated protrusions, each of which includes a base portion formed on the substrate and a top end portion opposite to the base portion; laterally growing a base layer on the top end portions of the protrusions of the protrusion-patterned layer in such a manner that each of the top end portions is covered by the base layer and that the base layer cooperates with the protrusions to define a plurality of cavities thereamong; thickening the base layer to a predetermined layer thickness; and separating the base layer from the substrate by destroying the protrusions of the protrusion-patterned layer.

REFERENCES:
patent: 5247390 (1993-09-01), Hed
patent: 6277160 (2001-08-01), Stubbs et al.
patent: 6821189 (2004-11-01), Coad et al.
patent: 2008/0035052 (2008-02-01), Chen

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