Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2007-05-22

2007-05-22

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S149000, C438S166000

Reexamination Certificate

active

11200000

ABSTRACT:
A method for manufacturing a semiconductor device includes: forming a semiconductor film on a substrate; performing dehydrogenation for removing hydrogen from the semiconductor film; performing inactivation by terminating a dangling bond of the semiconductor film with a supply of a molecule containing an impurity element to the semiconductor film at a concentration in accordance with a doping quantity; and crystallizing the semiconductor film while doping the impurity element contained in the molecule bonded to the dangling bond to the semiconductor film with a supply of energy to the inactivated semiconductor film, wherein the first to fourth steps are performed in an environment isolated from an atmosphere.

REFERENCES:
patent: 2006/0155413 (2006-07-01), Yamazaki et al.
patent: A 03-289140 (1991-12-01), None
patent: A 06-342757 (1994-12-01), None
patent: A 2003-257992 (2003-09-01), None

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