Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1993-02-11

1994-06-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 61, 437 69, 437 72, 437 73, H01L 2176

Patent

active

053189221

ABSTRACT:
A device isolation method for use in a process for manufacturing a semiconductor device, in which a pad oxide layer and a nitride layer are sequentially formed on the surface of a semiconductor substrate, an opening for defining the device isolating region is formed, and the substrate is oxidized at a high temperature to form a field oxide layer. Before the field oxide layer is formed, the nitride layer and pad oxide layer are etched to form a nitride layer spacer on the sidewalls of the pad oxide layer, to suppress the creation of a bird's beak due to lateral diffusion of oxygen between the pad oxide layer and nitride layer. In one embodiment, the nitride layer spacer is formed while leaving part of the pad oxide layer on the substrate, and the lower periphery of the spacer is undercut to be filled with an oxidizable material, thereby minimizing lateral diffusion of oxygen during the oxidation step.

REFERENCES:
patent: 4897364 (1990-01-01), Nguyen et al.
patent: 4927780 (1990-05-01), Roth et al.
patent: 5175123 (1992-12-01), Vasquez et al.

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