Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-03-20
2007-03-20
Nadav, Ori (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S158000, C438S162000
Reexamination Certificate
active
10917359
ABSTRACT:
A method for manufacturing a semiconductor device including forming a gate electrode over a substrate; forming a pate insulating film over the pate electrode and over the substrate; forming a semiconductor film on the gate insulating film; providing the semiconductor film with a metal element; crystallizing the semiconductor film provided with the metal element; doping an element which is used for gettering into a portion of the crystallized semiconductor film; and heating the crystallized semiconductor film whereby the metal element contained in a channel region of the semiconductor film is gettered by the portion.
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Nakajima Setsuo
Yamaguchi Naoaki
Yamazaki Shunpei
Nadav Ori
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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