Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2006-12-05

2006-12-05

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S648000, C438S656000

Reexamination Certificate

active

07144819

ABSTRACT:
It is an object of the present invention to provide a method for manufacturing a highly reliable semiconductor device with preferable yield. In the invention, two-step etching is performed when selectively removing an interlayer insulating film with at least two layers constituting a semiconductor device, and forming an opening. One feature of the invention is that at least either one of a first gas (a first etching gas) and a second gas (a second etching gas) used at the time of the two-step etching is added with an inert gas.

REFERENCES:
patent: 5453406 (1995-09-01), Chen
patent: 5747383 (1998-05-01), Chen et al.
patent: 5882761 (1999-03-01), Kawami et al.
patent: 6538390 (2003-03-01), Fujita et al.
patent: 6710387 (2004-03-01), Nakamura
patent: 2002/0113248 (2002-08-01), Yamagata et al.
patent: 2003/0207594 (2003-11-01), Catabay et al.
patent: 2005/0045891 (2005-03-01), Yamazaki et al.
patent: 08-330283 (1996-12-01), None
patent: 09-148066 (1997-06-01), None
patent: 11-111693 (1999-04-01), None
patent: 11-194499 (1999-07-01), None
patent: 11-271753 (1999-10-01), None
patent: 2000-058513 (2000-02-01), None
patent: 0 993 235 (2000-04-01), None
patent: 2001-110776 (2001-04-01), None
patent: 2001-203076 (2001-07-01), None
patent: 2002-313786 (2002-10-01), None
Miyashita et al., “Full Color Displays Fabricated by Ink-Jet,” Asia Display / IDW '01, pp. 1399-1402.

Affiliated with

Also associated with

Rating

Method for manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3718483