Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2006-02-28

2006-02-28

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S380000, C257S647000, C438S200000

Reexamination Certificate

active

07005712

ABSTRACT:
A semiconductor device of the present invention includes a semiconductor layer10, an insulation gate type heavy insulated transistor200and an insulation gate type light insulated transistor300having different drain-source breakdown voltages and formed on the semiconductor layer10, and a resistive impurity layer24formed on the semiconductor layer10.

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patent: 2002-134630 (2002-10-01), None
Japanese language Examination Result issued in corresponding Application No. JP-2003-009932.

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