Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2006-08-01

2006-08-01

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S723000

Reexamination Certificate

active

07084069

ABSTRACT:
Abstract of the Disclosure A method for manufacturing a semiconductor device including a conductive path extending from the upper surface of an insulating layer on a semiconductor substrate to a conductive member embedded in the insulating layer. An etching mask, which defines an etched hole for the conductor path, is formed on the insulating layer within a specified permissible error, and that portion of the insulating layer which is not covered by the etching mask is removed by a reactive ion etching unit having a reaction chamber into which a reactive gas of CHF3/CO is introduced at a CHF3/CO flow ratio of about 15/85. After this, the etched hole formed by an etching process is filled with a conductive material for the conductive path.

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