Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2006-07-18

2006-07-18

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S655000, C438S689000, C438S299000, C438S300000, C438S216000, C438S164000, C257S332000, C257S063000, C134S003000

Reexamination Certificate

active

07078345

ABSTRACT:
There is disclosed a method of manufacturing a semiconductor device comprising forming a diffusion region containing arsenic impurity at a concentration of 1×1020cm−3or more in an element region of Si substrate which is isolated by an element isolating insulation film with a gate electrode being employed as a mask, depositing Ni metal all over the substrate, heat-treating the substrate at a temperature of less than 400° C., thereby forming a nickel silicide film containing Ni2Si on the diffusion region, removing unreacted Ni metal deposited on the element isolating insulation film, heat-treating the substrate at a temperature of 450° C. or more, thereby forming an NiSi film having a arsenic compound layer on the surface thereof, removing the arsenic compound layer by an alkaline liquid, depositing an interlayer insulating film the entire surface of the substrate, and forming a wiring layer piercing through the interlayer insulating film.

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Ceria Slurries: Altrnative Slurry for Post CMP Cleams; Maria A. lester, Associate Editor —Semiconductor International, May 1, 2002.

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