Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-06-28
2005-06-28
Wille, Douglas (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000
Reexamination Certificate
active
06911359
ABSTRACT:
An insulating film (12) is formed on a substrate (11), and an aperture (121) is formed in the prescribed position on the surface of the insulating film (12) perpendicular to such surface, and an amorphous silicon film (13) having a prescribed thickness is formed on the insulating film (12). Subsequently, the amorphous silicon film (13) is changed to a polycrystalline silicon film (13) by a solid-phase growth through a heat treatment. The polycrystalline silicon film (13) is irradiated by a laser under a prescribed condition, and the polycrystalline silicon inside the bottom part of the aperture (121) is maintained in an unmelted state while other parts of the polycrystalline silicon film are completely melted, so that the unmelted polycrystalline silicon can be used as a crystal nucleus for crystal growth, and the area around the aperture (121) in the polycrystalline silicon film is changed to a silicon film in a substantially single crystal state. Using such silicon film in a substantially single crystal state, a thin-film transistor is obtained.
REFERENCES:
patent: 5893730 (1999-04-01), Yamazaki et al.
patent: 6133073 (2000-10-01), Yamazaki et al.
patent: 6291275 (2001-09-01), Yamazaki et al.
patent: A 62-119914 (1987-06-01), None
IBM TDB ppp 257-258, 1993.
“Single Crystal Thin Film Transistors”, IBM Technical Disclosure Bulletin, pp. 257-258, 1993.
Ishihara et al., “Advance Excimer-Laser Crystallization Techniques of Si Thin-Film for Location Control of Large Grain on Glass”, Proceedings of SPIE, vol. 4295, pp. 14-23, 2001.
Oliff & Berridg,e PLC
Seiko Epson Corporation
Wille Douglas
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