Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-26
2005-07-26
Nguyen, Ha Tran (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C438S614000, C438S622000, C438S637000, C438S687000
Reexamination Certificate
active
06921714
ABSTRACT:
A plurality of intermediate layers are formed on a base layer. Each of the intermediate layers include a conductive pad which is formed on both the insulating film of the immediately preceding layer and an interlayer insulating film which is formed on both the conductive pad of the same intermediate layer and the insulating film of the preceding intermediate layer. A plurality of through holes are formed in each of the interlayer insulating films and are filled with conductive material. The conductive pad of each intermediate layer is in electrical contact with the conductive material in the through holes of the top most intermediate layer. An insulating film is formed on both this conductive pad and the insulating film of the top most intermediate layer. A hole is formed in this insulating film which hole is substantially the same size as the conductive pad. A bonding pad is formed on the conductive pad in the through hole.
REFERENCES:
patent: 5149674 (1992-09-01), Freeman, Jr. et al.
patent: 5248903 (1993-09-01), Heim
patent: 5291062 (1994-03-01), Higgins, III
patent: 5345108 (1994-09-01), Kikkawa
patent: 5475236 (1995-12-01), Yoshizaki
patent: 5502337 (1996-03-01), Nozaki
patent: 5525546 (1996-06-01), Harada et al.
patent: 5736791 (1998-04-01), Fujiki et al.
patent: 5739587 (1998-04-01), Sato
patent: 5838023 (1998-11-01), Goel et al.
patent: 5847466 (1998-12-01), Ito et al.
patent: 5923088 (1999-07-01), Shiue et al.
patent: 5939789 (1999-08-01), Kawai et al.
patent: 6031293 (2000-02-01), Hsuan et al.
patent: 6037668 (2000-03-01), Cave et al.
patent: 6133625 (2000-10-01), Maeda
patent: 6265313 (2001-07-01), Huang et al.
patent: 61-59855 (1986-03-01), None
patent: 6-283611 (1994-10-01), None
patent: 6-326150 (1994-11-01), None
patent: 7-335690 (1995-12-01), None
patent: 9-219451 (1997-08-01), None
Dickstein Shapiro Morin & Oshinsky LLP.
Nguyen Ha Tran
Yamaha Corporation
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