Method for manufacturing a semiconductive device

Details Method for manufacturing a semiconductive device Method for manufacturing a semiconductive device

1982-05-26

1983-11-15

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 29576B, 29578, H01L 21223, H01L 21265

Patent

active

044153848

ABSTRACT:
A method for manufacturing a semiconductive device comprising: exposing a part of the surface of an n-type semiconductive substrate and covering the other part with an oxide film; partially providing the exposed part of the n-type semiconductive film with a film comprising a nitrided film and a polycrystalline silicon; doping boron through the exposed part of the n-type semiconductive substrate and the film provided on the same to thereby selectively form a p-type base region within the n-type semiconductive substrate; and, doping phosphorus or arsenic through the film on the exposed part of the n-type semiconductive substrate to thereby selectively form an collector ohmic region within the p-type base region.

REFERENCES:
patent: 4006046 (1977-02-01), Pravin
patent: 4111726 (1978-09-01), Chen
patent: 4127931 (1978-12-01), Shiba
patent: 4199378 (1980-04-01), van Gils
patent: 4199380 (1980-04-01), Farrell et al.
patent: 4263066 (1981-04-01), Kolmann
patent: 4306915 (1981-12-01), Shiba
patent: 4343080 (1982-08-01), Hataishi et al.
patent: 4379001 (1983-04-01), Sakai et al.

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