Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1995-02-06
1996-01-30
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257666, 257528, 257531, 257904, H01L 2348, H01L 2944, H01L 2952
Patent
active
054882575
ABSTRACT:
A method and resulting structure for constructing an IC package utilizing thin film technology. The package has a bottom conductive plate that has a layer of ceramic vapor deposited onto the plate in a predetermined pattern. Adjacent to the insulative layer of ceramic is a layer of conductive metal vapor deposited onto the ceramic. The layer of metal can be laid down onto the ceramic in a predetermined pattern to create a power plane, a plurality of signal lines, or a combination of power planes and signal lines. On top of the layer of conductive material is a lead frame separated by a layer of insulative polyimide material. The polyimide material has a plurality of holes filled with a conductive material, which electrically couple the layer of conductive material with the leads of the lead frame. The power and ground pads of the integrated circuit are connected to the layer of vapor deposited conductive material and conductive plate, which are also coupled to the corresponding leads of the lead frame, thereby connecting the IC to the leads of the lead frame. The signal pads of the IC are connected to the lead frame and/or signal lines formed within the layer of vapor deposited conductive material. The IC and attached circuit package can then be encapsulated in a plastic shell.
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Bhattacharyya Bidyut
Mallik Debendra
Crane Sara W.
Intel Corporation
Jr. Carl Whitehead
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