Method for manufacturing a Schottky-type rectifier having contro

Details Method for manufacturing a Schottky-type rectifier having contro Method for manufacturing a Schottky-type rectifier having contro

1988-12-08

1990-08-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437176, 437177, 437178, 437179, 357 15, 357 67, 357 71, 148DIG139, 148DIG140, H01L 2100, H01L 2102, H01L 21283, H01L 21285

Patent

active

049468030

ABSTRACT:
A Schottky-type diode is fabricated by a process that enables the diodes conductor-to-semiconductor barrier height .phi..sub.B to be controlled by adjusting the thickness of a metal silicide layer (22) which forms a rectifying junction (20) with an N-type semiconductor (24). In fabricating one version of the diode, a metallic layer (70) consisting of two or more metals such as platinum and nickel is deposited on an N-type silicon semiconductor (68) and heated to create a metal silicide layer (72) consisting of a lower layer (62) and an upper layer (74) of different average composition. A portion of the upper layer is then removed, allowing .phi..sub.B to be adjusted suitably.

REFERENCES:
patent: 3855612 (1974-12-01), Rosvold
patent: 3938243 (1976-02-01), Rosvold
patent: 3964084 (1976-06-01), Andrews, Jr. et al.
patent: 4201999 (1980-05-01), Howard et al.
patent: 4816879 (1989-03-01), Ellwanger
van Gurp, G., Aluminum-Silicide Reactions II. Schottky-Barrier Height, J. Appl. Phys. 50(11), Nov. 1979, pp. 6923-6926.
Stolt, L., Variation of PtSi-nSi Barrier Height with Fabrication Parameters, and Characterization of the Electrical Behavior of the Junction, Physica Scripta, vol. 18, 1978 (Dec.), pp. 410-412.

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